Samsung DDR3 8GB 1600MHz 8GB vs Kingston XK2M26-MIE 16GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Kingston XK2M26-MIE 16GB

Kingston XK2M26-MIE 16GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

更快的读取速度，GB/s

14.9 14

测试中的平均数值
更快的写入速度，GB/s

9.6 6.4

测试中的平均数值

Kingston XK2M26-MIE 16GB

需要考虑的原因
Kingston XK2M26-MIE 16GB

报告一个错误

低于PassMark测试中的延时，ns

39 43

左右 -10% 更低的延时
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Kingston XK2M26-MIE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 39
读取速度，GB/s

14.9 14.0
写入速度，GB/s

9.6 6.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2506 2297

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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G Skill Intl F4-3000C16-8GRS 8GB

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Kingston 9905471-006.A00LF 4GB

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Gold Key Technology Co Ltd NMUD480E82-3200D 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Apacer Technology 78.C2GFL.C720B 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Kllisre HMA81GU6AFR8N-VK 8GB

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Essencore Limited KD48GU88A-26N1600 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Samsung M393A1G43DB1-CRC 8GB

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SK Hynix HYMP125U64CP8-S6 2GB

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Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

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Gloway International (HK) STK4U2400D17161C 16GB

Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

G Skill Intl F4-3600C18-8GTZR 8GB

G Skill Intl F4-3600C18-8GTZR 8GB

Corsair CMK16GX4M2K4266C16 8GB

Corsair CMK16GX4M2K4266C16 8GB

Kingston KHX3200C20S4/16GX 16GB

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Kingston 9905624-013.A00G 8GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

G Skill Intl F4-3600C18-32GTZN 32GB

G Skill Intl F4-3600C18-32GTZN 32GB