Samsung DDR3 8GB 1600MHz 8GB vs Kllisre 0000 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Kllisre 0000 8GB

Kllisre 0000 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

低于PassMark测试中的延时，ns

43 49

左右 12% 更低的延时
更快的读取速度，GB/s

14.9 10.9

测试中的平均数值
更快的写入速度，GB/s

9.6 7.9

测试中的平均数值

Kllisre 0000 8GB

需要考虑的原因
Kllisre 0000 8GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Kllisre 0000 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 49
读取速度，GB/s

14.9 10.9
写入速度，GB/s

9.6 7.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2506 2220

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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PNY Electronics PNY 2GB

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Team Group Inc. TEAMGROUP-UD4-3200 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Corsair CMK16GX4M2B3000C15 8GB

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Kingston ACR16D3LFS1KBG/2G 2GB

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A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Samsung M393A2G40DB0-CPB 16GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB