Samsung DDR3 8GB 1600MHz 8GB vs Lexar Co Limited LD4AS016G-H2666G 16GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Lexar Co Limited LD4AS016G-H2666G 16GB

Lexar Co Limited LD4AS016G-H2666G 16GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

更快的读取速度，GB/s

14.9 13

测试中的平均数值
更快的写入速度，GB/s

9.6 7.9

测试中的平均数值

Lexar Co Limited LD4AS016G-H2666G 16GB

需要考虑的原因
Lexar Co Limited LD4AS016G-H2666G 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 43

左右 -16% 更低的延时
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Lexar Co Limited LD4AS016G-H2666G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 37
读取速度，GB/s

14.9 13.0
写入速度，GB/s

9.6 7.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2506 2512

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Lexar Co Limited LD4AS016G-H2666G 16GB

Lexar Co Limited LD4AS016G-H2666G 16GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Corsair CMD64GX4M4C3000C15 16GB

Corsair CMD64GX4M4C3000C15 16GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

Essencore Limited IM48GU88N24-FFFHAB 8GB

Essencore Limited IM48GU88N24-FFFHAB 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Corsair CM4X8GD3200C16K2E 8GB

Corsair CM4X8GD3200C16K2E 8GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CB8GS2400.C8D 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Chun Well Technology Holding Limited D4U0836181B 8GB

Chun Well Technology Holding Limited D4U0836181B 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Samsung M393A2G40EB1-CRC 16GB

Samsung M393A2G40EB1-CRC 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Corsair CMK64GX4M8B2800C14 8GB

Corsair CMK64GX4M8B2800C14 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Chun Well Technology Holding Limited D4U1636144B 16GB

Chun Well Technology Holding Limited D4U1636144B 16GB

Samsung M378B5673FH0-CF8 2GB

Samsung M378B5673FH0-CF8 2GB

Corsair CMT16GX4M2C3000C15 8GB

Corsair CMT16GX4M2C3000C15 8GB

Kingston 99U5469-046.A00LF 4GB

Kingston 99U5469-046.A00LF 4GB

AMD R5S34G1601U1S 4GB

AMD R5S34G1601U1S 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Samsung M471A5143DB0-CPB 4GB

Samsung M471A5143DB0-CPB 4GB

Team Group Inc. TEAMGROUP-UD3-2400 8GB

Team Group Inc. TEAMGROUP-UD3-2400 8GB

G Skill Intl F4-4000C18-8GTZRB 8GB

G Skill Intl F4-4000C18-8GTZRB 8GB