Samsung DDR3 8GB 1600MHz 8GB vs Micron Technology 16ATF4G64HZ-2G6B4 32GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Micron Technology 16ATF4G64HZ-2G6B4 32GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Micron Technology 16ATF4G64HZ-2G6B4 32GB

需要考虑的原因
Micron Technology 16ATF4G64HZ-2G6B4 32GB

报告一个错误

低于PassMark测试中的延时，ns

38 43

左右 -13% 更低的延时
更快的读取速度，GB/s

15.9 14.9

测试中的平均数值
更快的写入速度，GB/s

15.1 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 38
读取速度，GB/s

14.9 15.9
写入速度，GB/s

9.6 15.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2506 3264

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Crucial Technology CT8G4SFS824A.C8FBD1 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Kingston 99U5584-005.A00LF 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT8G4DFD824A.M16FB 8GB

Crucial Technology CT8G4DFD824A.M16FB 8GB