Samsung DDR3 8GB 1600MHz 8GB vs Samsung M378A1K43BB1-CRC 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Samsung M378A1K43BB1-CRC 8GB

Samsung M378A1K43BB1-CRC 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

更快的写入速度，GB/s

9.6 9.5

测试中的平均数值

Samsung M378A1K43BB1-CRC 8GB

需要考虑的原因
Samsung M378A1K43BB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 43

左右 -95% 更低的延时
更快的读取速度，GB/s

15.9 14.9

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Samsung M378A1K43BB1-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 22
读取速度，GB/s

14.9 15.9
写入速度，GB/s

9.6 9.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2506 2611

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Kingston ACR256X64D3S1333C9 2GB

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Kingston KHX1600C9D3/4GX 4GB

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Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Crucial Technology CT16G4DFRA266.C8FB 16GB

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SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

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Samsung M471A1K43DB1-CTD 8GB

Corsair CMSX8GX4M2A2666C18 4GB

Corsair CMSX8GX4M2A2666C18 4GB