Samsung M3 78T2863EHS-CF7 1GB vs A-DATA Technology AO2P21FC4R1-BRFS 4GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

A-DATA Technology AO2P21FC4R1-BRFS 4GB

A-DATA Technology AO2P21FC4R1-BRFS 4GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 15.2

测试中的平均数值
更快的写入速度，GB/s

2,123.3 10.8

测试中的平均数值

A-DATA Technology AO2P21FC4R1-BRFS 4GB

需要考虑的原因
A-DATA Technology AO2P21FC4R1-BRFS 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 59

左右 -127% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

A-DATA Technology AO2P21FC4R1-BRFS 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 26
读取速度，GB/s

4,833.8 15.2
写入速度，GB/s

2,123.3 10.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 2323

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramsta Ramsta-2666MHz-4G 4GB

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Avant Technology F6451U64F9333G 4GB

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AMD R744G2400U1S 4GB

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Corsair CML8GX3M2A1600C9 4GB

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Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

SK Hynix GKE160UD102408-2400 16GB

SK Hynix GKE160UD102408-2400 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Essencore Limited IM48GU88N21-FFFHM 8GB

Essencore Limited IM48GU88N21-FFFHM 8GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Smart Modular SF464128CKHIWDFSEG 4GB

Smart Modular SF464128CKHIWDFSEG 4GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

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SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB