Samsung M3 78T2863EHS-CF7 1GB vs Apacer Technology 78.BAGMD.AF20B 4GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Apacer Technology 78.BAGMD.AF20B 4GB

Apacer Technology 78.BAGMD.AF20B 4GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 18.5

测试中的平均数值
更快的写入速度，GB/s

2,123.3 13.6

测试中的平均数值

Apacer Technology 78.BAGMD.AF20B 4GB

需要考虑的原因
Apacer Technology 78.BAGMD.AF20B 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 59

左右 -181% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Apacer Technology 78.BAGMD.AF20B 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 21
读取速度，GB/s

4,833.8 18.5
写入速度，GB/s

2,123.3 13.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 2874

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF2G64HZ-2G6E1 16GB

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Apacer Technology 78.CAGPP.40C0B 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Corsair CMT64GX4M4K3600C18 16GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Apacer Technology 78.CAGR4.DFC0B 8GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

Kingmax Semiconductor GZOH23F-18---------- 16GB