Samsung M3 78T2863EHS-CF7 1GB vs Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 17.4

测试中的平均数值
更快的写入速度，GB/s

2,123.3 13.0

测试中的平均数值

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 59

左右 -168% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 22
读取速度，GB/s

4,833.8 17.4
写入速度，GB/s

2,123.3 13.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 3162

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Corsair CMD16GX4M4C3200C16 4GB

Corsair CMD16GX4M4C3200C16 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMD16GX4M2B2400C10 8GB

Corsair CMD16GX4M2B2400C10 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMD64GX4M4A2400C14 16GB

Corsair CMD64GX4M4A2400C14 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Golden Empire CL15-15-15 D4-2400 4GB

Golden Empire CL15-15-15 D4-2400 4GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3733C17-8GTZSW 8GB

G Skill Intl F4-3733C17-8GTZSW 8GB

A-DATA Technology DDR3L 1600G 4GB

A-DATA Technology DDR3L 1600G 4GB

A-DATA Technology DDR4 3600 8GB

A-DATA Technology DDR4 3600 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Team Group Inc. TEAMGROUP-Ind-2666 8GB

Team Group Inc. TEAMGROUP-Ind-2666 8GB

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

SK Hynix HMA851S6CJR6N-UH 4GB

SK Hynix HMA851S6CJR6N-UH 4GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KHX3000C15D4/8GX 8GB

Kingston KHX3000C15D4/8GX 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Corsair CMW16GX4M2Z4000C18 8GB

Corsair CMW16GX4M2Z4000C18 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB