Samsung M3 78T2863EHS-CF7 1GB vs Corsair CMK16GX4M4B3733C17 4GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Corsair CMK16GX4M4B3733C17 4GB

Corsair CMK16GX4M4B3733C17 4GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 20.3

测试中的平均数值
更快的写入速度，GB/s

2,123.3 16.7

测试中的平均数值

Corsair CMK16GX4M4B3733C17 4GB

需要考虑的原因
Corsair CMK16GX4M4B3733C17 4GB

报告一个错误

低于PassMark测试中的延时，ns

19 59

左右 -211% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Corsair CMK16GX4M4B3733C17 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 19
读取速度，GB/s

4,833.8 20.3
写入速度，GB/s

2,123.3 16.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 3485

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2800C15-8GTZB 8GB

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Kingston ACR26D4S9S1KA-4 4GB

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Kingston KHX318C10FR/8G 8GB

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Micron Technology 8ATF1G64HZ-2G6E3 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Transcend Information TS512MSK64W6H 4GB

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Neo Forza NMUD416E82-3600 16GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

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Kingston 9905678-024.A00G 4GB

Kingston 9905678-024.A00G 4GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

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Samsung M393A1G43DB0-CPB 8GB

Samsung M393A1G43DB0-CPB 8GB

Kingston 9905403-090.A01LF 4GB

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Apacer Technology 78.CAGPN.AZ50C 8GB

Apacer Technology 78.CAGPN.AZ50C 8GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB