Samsung M3 78T2863EHS-CF7 1GB vs Corsair CMW16GX4M2D3600C18 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Corsair CMW16GX4M2D3600C18 8GB

Corsair CMW16GX4M2D3600C18 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 18.3

测试中的平均数值
更快的写入速度，GB/s

2,123.3 15.1

测试中的平均数值

Corsair CMW16GX4M2D3600C18 8GB

需要考虑的原因
Corsair CMW16GX4M2D3600C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 59

左右 -103% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Corsair CMW16GX4M2D3600C18 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 29
读取速度，GB/s

4,833.8 18.3
写入速度，GB/s

2,123.3 15.1
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 3529

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

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Samsung M391B5673EH1-CH9 2GB

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Crucial Technology CT16G4SFD8266.C16FJ 16GB

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Kingston ACR512X64D3S13C9G 4GB

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G Skill Intl F4-3200C16-8GTZKO 8GB