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Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB

Samsung M3 78T2863EHS-CF7 1GB vs Micron Technology 8ATF1G64HZ-2G3B1 8GB

总分
star star star star star
Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分
star star star star star
Micron Technology 8ATF1G64HZ-2G3B1 8GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

差异 规格 评论

差异

Samsung M3 78T2863EHS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 14.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,123.3 left arrow 10.7
    测试中的平均数值
Micron Technology 8ATF1G64HZ-2G3B1 8GB 需要考虑的原因
Micron Technology 8ATF1G64HZ-2G3B1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 59
    左右 -64% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 36
  • 读取速度，GB/s
    4,833.8 left arrow 14.2
  • 写入速度，GB/s
    2,123.3 left arrow 10.7
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    731 left arrow 2474

Samsung M3 78T2863EHS-CF7 1GB RAM的比较

Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB RAM的比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
内存RAM
Nanya Technology NT4GC64C88B1NS-DI 4GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Mushkin MRA4S320GJJM32G 32GB
Mushkin MRA4S320GJJM32G 32GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
G Skill Intl F4-3000C15-8GRBB 8GB
G Skill Intl F4-3000C15-8GRBB 8GB
内存RAM
Kingston KVT8FP-HYC 4GB
Kingston KVT8FP-HYC 4GB
Hewlett-Packard 7EH74AA#ABC 8GB
Hewlett-Packard 7EH74AA#ABC 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
DSL Memory D4SS1G081SH24A-A 8GB
DSL Memory D4SS1G081SH24A-A 8GB
内存RAM
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
Corsair CM4X4GD3000C16K2 4GB
Corsair CM4X4GD3000C16K2 4GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
Essencore Limited KD4AGU88C-26N1900 16GB
Essencore Limited KD4AGU88C-26N1900 16GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Mushkin MRA4S266GHHF32G 32GB
Mushkin MRA4S266GHHF32G 32GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston KP6FH5-MIE 32GB
Kingston KP6FH5-MIE 32GB
内存RAM