Samsung M3 78T2863EHS-CF7 1GB vs Micron Technology CT8G4DFD8213.16FA2 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Micron Technology CT8G4DFD8213.16FA2 8GB

Micron Technology CT8G4DFD8213.16FA2 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 11.9

测试中的平均数值
更快的写入速度，GB/s

2,123.3 10.2

测试中的平均数值

Micron Technology CT8G4DFD8213.16FA2 8GB

需要考虑的原因
Micron Technology CT8G4DFD8213.16FA2 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 59

左右 -90% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Micron Technology CT8G4DFD8213.16FA2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 31
读取速度，GB/s

4,833.8 11.9
写入速度，GB/s

2,123.3 10.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 2585

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL16G32C16U4BL.M8FB1 16GB

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Avant Technology F6451U64F9333G 4GB

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Samsung M3 78T5663RZ3-CE6 2GB

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GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

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Kingston 9905471-006.A01LF 4GB

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G Skill Intl F4-3200C16-8GTZRN 8GB

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A-DATA Technology DDR4 3000 8GB

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A-DATA Technology DDR4 2133 2OZ 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Kingston KHX2400C15/16G 16GB

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