Samsung M3 78T2863EHS-CF7 1GB vs Team Group Inc. TEAMGROUP-UD4-4133 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Team Group Inc. TEAMGROUP-UD4-4133 8GB

Team Group Inc. TEAMGROUP-UD4-4133 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 18.8

测试中的平均数值
更快的写入速度，GB/s

2,123.3 17.7

测试中的平均数值

Team Group Inc. TEAMGROUP-UD4-4133 8GB

需要考虑的原因
Team Group Inc. TEAMGROUP-UD4-4133 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 59

左右 -111% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Team Group Inc. TEAMGROUP-UD4-4133 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 28
读取速度，GB/s

4,833.8 18.8
写入速度，GB/s

2,123.3 17.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 3838

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

SK Hynix HMA851S6AFR6N-UH 4GB

SK Hynix HMA851S6AFR6N-UH 4GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Crucial Technology BL32G32C16S4B.16FB 32GB

Crucial Technology BL32G32C16S4B.16FB 32GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMK4GX4M1D2400C14 4GB

Corsair CMK4GX4M1D2400C14 4GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Crucial Technology CT8G4SFS824A.C8FHD1 8GB

Crucial Technology CT8G4SFS824A.C8FHD1 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Teikon TMA851U6AFR6N-UHHC 4GB

Teikon TMA851U6AFR6N-UHHC 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Kingston 9905702-184.A00G 8GB

Kingston 9905702-184.A00G 8GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Crucial Technology CT4G4DFS8213.C8FBD2 4GB

Crucial Technology CT4G4DFS8213.C8FBD2 4GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

G Skill Intl F4-3200C15-16GVK 16GB

G Skill Intl F4-3200C15-16GVK 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Kingston KHX2133C14/8G 8GB

Kingston KHX2133C14/8G 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

A-DATA Technology AO2P26KC8T1-BC1S 8GB

A-DATA Technology AO2P26KC8T1-BC1S 8GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Kingston CBD24D4S7S8ME-8 8GB

Kingston CBD24D4S7S8ME-8 8GB