Samsung M3 78T2863QZS-CF7 1GB vs Apacer Technology GD2.11173T.001 4GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

Apacer Technology GD2.11173T.001 4GB

Apacer Technology GD2.11173T.001 4GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 12.5

测试中的平均数值

Apacer Technology GD2.11173T.001 4GB

需要考虑的原因
Apacer Technology GD2.11173T.001 4GB

报告一个错误

低于PassMark测试中的延时，ns

51 69

左右 -35% 更低的延时
更快的写入速度，GB/s

5.9 1,857.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

Apacer Technology GD2.11173T.001 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 51
读取速度，GB/s

4,217.2 12.5
写入速度，GB/s

1,857.7 5.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

668 1081

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK16GX4M4C3000C16 4GB

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Corsair CMK16GX4M4B3400C16 4GB

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Samsung M3 78T2863QZS-CF7 1GB

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Apacer Technology GD2.11173T.001 4GB

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Samsung M378B5673EH1-CF8 2GB

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Crucial Technology CT16G4SFD824A.C16FN 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

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G Skill Intl F4-3600C14-16GTZRA 16GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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G Skill Intl F4-3333C16-8GTZKW 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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Crucial Technology CT16G4DFRA32A.M16FJ1 16GB

Crucial Technology CT16G4DFRA32A.M16FJ1 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Panram International Corporation W4U2133PS-8G 8GB

Panram International Corporation W4U2133PS-8G 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston 9965640-016.A00G 32GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M471A1K1KCB1-CRC 8GB

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Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

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