Samsung M3 78T2863QZS-CF7 1GB vs Crucial Technology CT16G4SFD824A.C16FN 16GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

Crucial Technology CT16G4SFD824A.C16FN 16GB

Crucial Technology CT16G4SFD824A.C16FN 16GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 15.2

测试中的平均数值

Crucial Technology CT16G4SFD824A.C16FN 16GB

需要考虑的原因
Crucial Technology CT16G4SFD824A.C16FN 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 69

左右 -86% 更低的延时
更快的写入速度，GB/s

11.5 1,857.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

Crucial Technology CT16G4SFD824A.C16FN 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 37
读取速度，GB/s

4,217.2 15.2
写入速度，GB/s

1,857.7 11.5
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

668 2802

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Smart Modular SF4641G8CK8I6GKSEG 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Crucial Technology BLS8G4S26BFSDK.8FD 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Wilk Elektronik S.A. GR2666S464L19/16G 16GB

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Samsung M378A1K43EB2-CWE 8GB

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Samsung M471A1K43BB1-CRC 8GB

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Samsung M3 78T5663EH3-CF7 2GB

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Corsair CMK8GX4M2A2400C16 4GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Kingston 9905700-053.A00G 8GB

Kingston 9905700-053.A00G 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Micron Technology 16GB 2133MHz DIMM 16GB

Micron Technology 16GB 2133MHz DIMM 16GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Kingston KHX3200C16D4/32GX 32GB

Kingston KHX3200C16D4/32GX 32GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Transcend Information TS2GSH64V6B 16GB

Transcend Information TS2GSH64V6B 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Transcend Information JM3200HLG-8G 8GB

Transcend Information JM3200HLG-8G 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology CT16G4DFD824A.M16FD 16GB

Crucial Technology CT16G4DFD824A.M16FD 16GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Kingston KF3200C16D4/16GX 16GB

Kingston KF3200C16D4/16GX 16GB