Samsung M3 78T2863QZS-CF7 1GB vs EVGA 16G-D4-2666-MR 4GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

EVGA 16G-D4-2666-MR 4GB

EVGA 16G-D4-2666-MR 4GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 17.3

测试中的平均数值

EVGA 16G-D4-2666-MR 4GB

需要考虑的原因
EVGA 16G-D4-2666-MR 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 69

左右 -200% 更低的延时
更快的写入速度，GB/s

12.8 1,857.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

EVGA 16G-D4-2666-MR 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 23
读取速度，GB/s

4,217.2 17.3
写入速度，GB/s

1,857.7 12.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

668 2942

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM4X8GE2666C16K4 8GB

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Team Group Inc. Vulcan-1600 4GB

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Apacer Technology 78.CAGPN.DF40B 8GB

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Samsung M3 78T2863QZS-CF7 1GB

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Mushkin MR[A/B]4U266GHHF16G 16GB

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G Skill Intl F3-2133C9-4GAB 4GB

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G Skill Intl F4-3000C15-8GVKB 8GB

Micron Technology M471A1K43BB1-CRC 8GB

Micron Technology M471A1K43BB1-CRC 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

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Gloway International Co. Ltd. STK4U2400D17082C 8GB

Gloway International Co. Ltd. STK4U2400D17082C 8GB

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Corsair CMSX4GX3M1A1600C9 4GB

Crucial Technology BLS8G4D240FSE.16FBD 8GB

Crucial Technology BLS8G4D240FSE.16FBD 8GB