Samsung M3 78T2863QZS-CF7 1GB vs G Skill Intl F4-2400C17-8GNT 8GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

G Skill Intl F4-2400C17-8GNT 8GB

G Skill Intl F4-2400C17-8GNT 8GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 16.3

测试中的平均数值

G Skill Intl F4-2400C17-8GNT 8GB

需要考虑的原因
G Skill Intl F4-2400C17-8GNT 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 69

左右 -109% 更低的延时
更快的写入速度，GB/s

11.7 1,857.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-2400C17-8GNT 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 33
读取速度，GB/s

4,217.2 16.3
写入速度，GB/s

1,857.7 11.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

668 2918

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD16GX4M2B2400C10 8GB

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G Skill Intl F4-3200C16-16GTZN 16GB

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Ramaxel Technology RMUA5110MB78HAF-2400 8GB

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Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

Crucial Technology CT25664AA800.M16FM 2GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Kingston 9965525-155.A00LF 8GB

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Kingston 99U5403-465.A00LF 8GB

V-GEN D4H4GS24A8 4GB

V-GEN D4H4GS24A8 4GB

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Kingston KHX1600C9D3/8G 8GB

Micron Technology 18ADF2G72AZ-2G3A1 16GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Apacer Technology 78.CAGMT.40C0B 8GB

Apacer Technology 78.CAGMT.40C0B 8GB

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Kingston 9965433-034.A00LF 4GB

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Kingston 9905702-150.A00G 8GB