Samsung M3 78T2863QZS-CF7 1GB vs G Skill Intl F4-3000C16-8GTZR 8GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

G Skill Intl F4-3000C16-8GTZR 8GB

G Skill Intl F4-3000C16-8GTZR 8GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 17.7

测试中的平均数值

G Skill Intl F4-3000C16-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-3000C16-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 69

左右 -138% 更低的延时
更快的写入速度，GB/s

13.8 1,857.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-3000C16-8GTZR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 29
读取速度，GB/s

4,217.2 17.7
写入速度，GB/s

1,857.7 13.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

668 3401

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX2400C12D4/16GX 16GB

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G Skill Intl F4-3000C16-8GTZR 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Kingston 9905712-008.A00G 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

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A-DATA Technology AO1P24HC4R1-BUYS 4GB

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Kingston KF2666C16D4/8G 8GB

Kingston KF2666C16D4/8G 8GB