Samsung M3 78T2863QZS-CF7 1GB vs G Skill Intl F4-3200C14-8GTRG 8GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

G Skill Intl F4-3200C14-8GTRG 8GB

G Skill Intl F4-3200C14-8GTRG 8GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 20.4

测试中的平均数值

G Skill Intl F4-3200C14-8GTRG 8GB

需要考虑的原因
G Skill Intl F4-3200C14-8GTRG 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 69

左右 -229% 更低的延时
更快的写入速度，GB/s

18.1 1,857.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-3200C14-8GTRG 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 21
读取速度，GB/s

4,217.2 20.4
写入速度，GB/s

1,857.7 18.1
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

668 4230

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX2133C11D3/4GX 4GB

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Kingston KF3600C18D4/32GX 32GB

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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Kingston KHX3600C17D4/8GX 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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AMD R748G2133U2S-UO 8GB

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OCZ OCZ3G2000LV2G 2GB

OCZ OCZ3G2000LV2G 2GB

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Apacer Technology 78.DAGNN.4030B 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston KHX21334D4/8G 8GB

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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

SK Hynix HMA82GS6CJR8N-V-V 16GB

SK Hynix HMA82GS6CJR8N-V-V 16GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6MFR8A-PB 4GB

SK Hynix HMT451S6MFR8A-PB 4GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

G Skill Intl F4-3000C15-8GTZ 8GB

G Skill Intl F4-3000C15-8GTZ 8GB