RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M3 78T2863RZS-CF7 1GB
Patriot Memory (PDP Systems) PSD21G8002 1GB

Samsung M3 78T2863RZS-CF7 1GB vs Patriot Memory (PDP Systems) PSD21G8002 1GB

总分
star star star star star
Samsung M3 78T2863RZS-CF7 1GB

Samsung M3 78T2863RZS-CF7 1GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD21G8002 1GB

Patriot Memory (PDP Systems) PSD21G8002 1GB

差异 规格 评论

差异

Samsung M3 78T2863RZS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863RZS-CF7 1GB
报告一个错误
Patriot Memory (PDP Systems) PSD21G8002 1GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD21G8002 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    50 left arrow 54
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    5 left arrow 4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,195.7 left arrow 1,926.6
    测试中的平均数值

规格

完整的技术规格清单
Samsung M3 78T2863RZS-CF7 1GB
Patriot Memory (PDP Systems) PSD21G8002 1GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时，ns
    54 left arrow 50
  • 读取速度，GB/s
    4,419.9 left arrow 5,014.6
  • 写入速度，GB/s
    1,926.6 left arrow 2,195.7
  • 内存带宽，mbps
    6400 left arrow 6400
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    662 left arrow 965

Samsung M3 78T2863RZS-CF7 1GB RAM的比较

Samsung M3 78T2863EHS-CF7 1GB
SK Hynix HMA82GR7MFR4N-UH 16GB

Patriot Memory (PDP Systems) PSD21G8002 1GB RAM的比较

Crucial Technology CT25664AA800.M16FM 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T2863RZS-CF7 1GB
Samsung M3 78T2863RZS-CF7 1GB
Patriot Memory (PDP Systems) PSD21G8002 1GB
Patriot Memory (PDP Systems) PSD21G8002 1GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL16G26C16U4W.16FD 16GB
Crucial Technology BL16G26C16U4W.16FD 16GB
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
Mushkin MRX4U300GJJM16G 16GB
Mushkin MRX4U300GJJM16G 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CMK32GX4M2B3200C16 16GB
Corsair CMK32GX4M2B3200C16 16GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
Crucial Technology CT16G4SFD824A.M16FH 16GB
Crucial Technology CT16G4SFD824A.M16FH 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Samsung M471A1K43CBCBCRC 8GB
Samsung M471A1K43CBCBCRC 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 9905702-204.A00G 8GB
Kingston 9905702-204.A00G 8GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
G Skill Intl F4-3200C16-8GTZR 8GB
G Skill Intl F4-3200C16-8GTZR 8GB
内存RAM
Kingston KHX8500D2K2/2GN 1GB
Kingston KHX8500D2K2/2GN 1GB
Samsung M474A4G43MB1-CTD 32GB
Samsung M474A4G43MB1-CTD 32GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Samsung M391B2873EH1-CF8 1GB
Samsung M391B2873EH1-CF8 1GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Avant Technology W642GU42J5213N8 16GB
Avant Technology W642GU42J5213N8 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
AMD R748G2400U2S 8GB
AMD R748G2400U2S 8GB
内存RAM