Samsung M3 78T2953EZ3-CF7 1GB vs A-DATA Technology AO2P24HCST2-BW8S 16GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

A-DATA Technology AO2P24HCST2-BW8S 16GB

A-DATA Technology AO2P24HCST2-BW8S 16GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

低于PassMark测试中的延时，ns

58 81

左右 28% 更低的延时
更快的读取速度，GB/s

4 14

测试中的平均数值

A-DATA Technology AO2P24HCST2-BW8S 16GB

需要考虑的原因
A-DATA Technology AO2P24HCST2-BW8S 16GB

报告一个错误

更快的写入速度，GB/s

7.0 1,950.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

A-DATA Technology AO2P24HCST2-BW8S 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 81
读取速度，GB/s

4,241.0 14.0
写入速度，GB/s

1,950.7 7.0
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

651 1634

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

A-DATA Technology AO2P24HCST2-BW8S 16GB

A-DATA Technology AO2P24HCST2-BW8S 16GB

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

A-DATA Technology AO1P32NC8T1-BCSS 8GB

A-DATA Technology AO1P32NC8T1-BCSS 8GB

Kingston HP669238-071-HYC 4GB

Kingston HP669238-071-HYC 4GB

Panram International Corporation PUD42133C138G4NJK 8GB

Panram International Corporation PUD42133C138G4NJK 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Crucial Technology CT16G4DFD8213.C16FBR 16GB

Crucial Technology CT16G4DFD8213.C16FBR 16GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Kingston XJV223-MIE 16GB

Kingston XJV223-MIE 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Crucial Technology BLS8G4D30AESEK.M8FE 8GB

Crucial Technology BLS8G4D30AESEK.M8FE 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Transcend Information JM2666HSE-16G 16GB

Transcend Information JM2666HSE-16G 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Crucial Technology CT4G4DFS8213.C8FAR1 4GB

Crucial Technology CT4G4DFS8213.C8FAR1 4GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

G Skill Intl F4-2400C15-8GRK 8GB

G Skill Intl F4-2400C15-8GRK 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

Samsung M471A1K43BB0-CPB 8GB

Samsung M471A1K43BB0-CPB 8GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Micron Technology M471A1K43BB1-CRC 8GB

Micron Technology M471A1K43BB1-CRC 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Crucial Technology BLS8G4D240FSCK.8FD 8GB

Crucial Technology BLS8G4D240FSCK.8FD 8GB