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Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology BLT4G4D30AETA.K8FD 4GB

Samsung M3 78T2953EZ3-CF7 1GB vs Crucial Technology BLT4G4D30AETA.K8FD 4GB

总分
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Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分
star star star star star
Crucial Technology BLT4G4D30AETA.K8FD 4GB

Crucial Technology BLT4G4D30AETA.K8FD 4GB

差异 规格 评论

差异

Samsung M3 78T2953EZ3-CF7 1GB 需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    58 left arrow 59
    左右 2% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 17.9
    测试中的平均数值
Crucial Technology BLT4G4D30AETA.K8FD 4GB 需要考虑的原因
Crucial Technology BLT4G4D30AETA.K8FD 4GB
报告一个错误
  • 更快的写入速度，GB/s
    9.0 left arrow 1,950.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology BLT4G4D30AETA.K8FD 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 59
  • 读取速度，GB/s
    4,241.0 left arrow 17.9
  • 写入速度，GB/s
    1,950.7 left arrow 9.0
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    651 left arrow 1968

Samsung M3 78T2953EZ3-CF7 1GB RAM的比较

Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB

Crucial Technology BLT4G4D30AETA.K8FD 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Micron Technology 8ATF51264AZ-2G1B1 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Crucial Technology CT16G4DFD8266.C16FP 16GB
Crucial Technology CT16G4DFD8266.C16FP 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Corsair CMK32GX4M2D3000C16 16GB
Corsair CMK32GX4M2D3000C16 16GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
G Skill Intl F4-3466C16-8GTZKW 8GB
G Skill Intl F4-3466C16-8GTZKW 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMK16GX4M2D3200C16 8GB
Corsair CMK16GX4M2D3200C16 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology BLT4G4D30AETA.K8FD 4GB
Crucial Technology BLT4G4D30AETA.K8FD 4GB
内存RAM
Kingston ACR16D3LS1KNG/4G 4GB
Kingston ACR16D3LS1KNG/4G 4GB
Corsair CMD32GX4M4A2400C14 8GB
Corsair CMD32GX4M4A2400C14 8GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Team Group Inc. TEAMGROUP-SD4-2400 16GB
Team Group Inc. TEAMGROUP-SD4-2400 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston ACR24D4S7D8MB-16 16GB
Kingston ACR24D4S7D8MB-16 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingston KYXC0V-MIB 16GB
Kingston KYXC0V-MIB 16GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3000C16-16GVRB 16GB
G Skill Intl F4-3000C16-16GVRB 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Wilk Elektronik S.A. GR2133S464L15/8G 8GB
Wilk Elektronik S.A. GR2133S464L15/8G 8GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
JUHOR JHD2666U1908JG 8GB
JUHOR JHD2666U1908JG 8GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666
内存RAM