Samsung M3 78T2953EZ3-CF7 1GB vs V-Color Technology Inc. TD8G16C16-UHK 8GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

V-Color Technology Inc. TD8G16C16-UHK 8GB

V-Color Technology Inc. TD8G16C16-UHK 8GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 17.9

测试中的平均数值

V-Color Technology Inc. TD8G16C16-UHK 8GB

需要考虑的原因
V-Color Technology Inc. TD8G16C16-UHK 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 58

左右 -164% 更低的延时
更快的写入速度，GB/s

14.5 1,950.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

V-Color Technology Inc. TD8G16C16-UHK 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 22
读取速度，GB/s

4,241.0 17.9
写入速度，GB/s

1,950.7 14.5
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

651 3204

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

V-Color Technology Inc. TD8G16C16-UHK 8GB

V-Color Technology Inc. TD8G16C16-UHK 8GB

AMD R5316G1609U2K 8GB

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King Tiger Technology TMKG8G3000C17(XMP) 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Crucial Technology BL32G32C16U4WL.M16FB 32GB

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AMD AE34G1601U1 4GB

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Corsair CM4X8GE2666C16K4 8GB

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Unigen Corporation U51U7200N8DD-BDH 4GB

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Crucial Technology CT8G4DFD8213.C16FAR1 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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G Skill Intl F4-4000C18-8GTZ 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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G Skill Intl F4-3400C16-8GTZKW 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

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Kingston HP26D4U9S8ME-8 8GB