Samsung M3 78T2953EZ3-CF7 1GB vs V-GEN D4H16GS24A8 16GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

V-GEN D4H16GS24A8 16GB

V-GEN D4H16GS24A8 16GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 14.5

测试中的平均数值

V-GEN D4H16GS24A8 16GB

需要考虑的原因
V-GEN D4H16GS24A8 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 58

左右 -152% 更低的延时
更快的写入速度，GB/s

7.3 1,950.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

V-GEN D4H16GS24A8 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 23
读取速度，GB/s

4,241.0 14.5
写入速度，GB/s

1,950.7 7.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

651 2361

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A2K43EB1-CWE 16GB

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Kingston KHX2133C14D4/8G 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Samsung M378A5244CB0-CTD 4GB