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Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMSX64GX4M2A2933C19 32GB
比较
Samsung M3 78T3354BZ0-CCC 256MB vs Corsair CMSX64GX4M2A2933C19 32GB
总分
Samsung M3 78T3354BZ0-CCC 256MB
总分
Corsair CMSX64GX4M2A2933C19 32GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
更快的读取速度,GB/s
2
16.7
测试中的平均数值
需要考虑的原因
Corsair CMSX64GX4M2A2933C19 32GB
报告一个错误
低于PassMark测试中的延时,ns
43
46
左右 -7% 更低的延时
更快的写入速度,GB/s
15.3
1,519.2
测试中的平均数值
更高的内存带宽,mbps
23400
3200
左右 7.31 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMSX64GX4M2A2933C19 32GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
43
读取速度,GB/s
2,909.8
16.7
写入速度,GB/s
1,519.2
15.3
内存带宽,mbps
3200
23400
Other
描述
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-23400, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
3-3-3-12 / 400 MHz
19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)
241
3304
Samsung M3 78T3354BZ0-CCC 256MB RAM的比较
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Corsair CMSX64GX4M2A2933C19 32GB RAM的比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Elpida EBJ81UG8BBU0-GN-F 8GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C15-8GTZSK 8GB
Samsung M471A5244CB0-CWE 4GB
Transcend Information TS512MSH64V4H 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHX3600C18D4/32GX 32GB
Kingston KP4T2F-PSB 4GB
G Skill Intl F4-3200C15-16GTZKY 16GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-3200C16-16GTZSK 16GB
Corsair VSA2GSDS667C4 2GB
G Skill Intl F4-3200C16-16GVK 16GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2133C15-8GNS 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Samsung M474A1G43EB1-CRC 8GB
Samsung M471B5273CH0-CH9 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
Nanya Technology M2S4G64CB8HB5N-CG 4GB
Kingston K1CXP8-MIE 16GB
报告一个错误
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Bug description
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