Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology BL8G32C16U4B.M8FE 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Crucial Technology BL8G32C16U4B.M8FE 8GB

Crucial Technology BL8G32C16U4B.M8FE 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 17.9

测试中的平均数值

Crucial Technology BL8G32C16U4B.M8FE 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4B.M8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 46

左右 -64% 更低的延时
更快的写入速度，GB/s

14.9 1,519.2

测试中的平均数值
更高的内存带宽，mbps

21300 3200

左右 6.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology BL8G32C16U4B.M8FE 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 28
读取速度，GB/s

2,909.8 17.9
写入速度，GB/s

1,519.2 14.9
内存带宽，mbps

3200 21300

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

3-3-3-12 / 400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

241 3460

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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SK Hynix HMT42GR7AFR4C-RD 16GB

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GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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SK Hynix HMA82GR7MFR4N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kingmax Semiconductor GLMH23F-18MCIA------ 16GB

Kingmax Semiconductor GLMH23F-18MCIA------ 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Patriot Memory (PDP Systems) 3733 C17 Series 8GB

Patriot Memory (PDP Systems) 3733 C17 Series 8GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

A-DATA Technology DDR4 3200 8GB

A-DATA Technology DDR4 3200 8GB

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

Aquarius Production Company LLC 16G-D4-2666-MR 4GB

Aquarius Production Company LLC 16G-D4-2666-MR 4GB