Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology CT16G4SFD832A.M16FJ 16GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Crucial Technology CT16G4SFD832A.M16FJ 16GB

Crucial Technology CT16G4SFD832A.M16FJ 16GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 17.1

测试中的平均数值

Crucial Technology CT16G4SFD832A.M16FJ 16GB

需要考虑的原因
Crucial Technology CT16G4SFD832A.M16FJ 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 46

左右 -48% 更低的延时
更快的写入速度，GB/s

15.3 1,519.2

测试中的平均数值
更高的内存带宽，mbps

25600 3200

左右 8 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology CT16G4SFD832A.M16FJ 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 31
读取速度，GB/s

2,909.8 17.1
写入速度，GB/s

1,519.2 15.3
内存带宽，mbps

3200 25600

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

3-3-3-12 / 400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

241 3520

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Kingston 9965525-155.A00LF 8GB

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Mushkin 99[2/7/4]192F 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Patriot Memory (PDP Systems) PSD22G8002 2GB

SK Hynix HMA451U7MFR8N-TF 4GB

SK Hynix HMA451U7MFR8N-TF 4GB

G Skill Intl F3-2133C9-4GAB 4GB

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Kingston 9905702-204.A00G 8GB

Kingston 9905702-204.A00G 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Team Group Inc. TEAMGROUP-ED4-2400 16GB

Team Group Inc. TEAMGROUP-ED4-2400 16GB

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

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Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

G Skill Intl F4-3200C16-16GTZA 16GB

G Skill Intl F4-3200C16-16GTZA 16GB