Samsung M3 78T3354BZ0-CCC 256MB vs G Skill Intl F4-3000C15-8GVGB 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

G Skill Intl F4-3000C15-8GVGB 8GB

G Skill Intl F4-3000C15-8GVGB 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 17.9

测试中的平均数值

G Skill Intl F4-3000C15-8GVGB 8GB

需要考虑的原因
G Skill Intl F4-3000C15-8GVGB 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 46

左右 -70% 更低的延时
更快的写入速度，GB/s

14.0 1,519.2

测试中的平均数值
更高的内存带宽，mbps

17000 3200

左右 5.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-3000C15-8GVGB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 27
读取速度，GB/s

2,909.8 17.9
写入速度，GB/s

1,519.2 14.0
内存带宽，mbps

3200 17000

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

241 3391

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-3000C15-8GVGB 8GB

G Skill Intl F4-3000C15-8GVGB 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Corsair CMD8GX4M2B3866C18 4GB

Corsair CMD8GX4M2B3866C18 4GB

G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F4-4000C16-16GVKA 16GB

G Skill Intl F4-4000C16-16GVKA 16GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

G Skill Intl F4-3200C14-16GVK 16GB

G Skill Intl F4-3200C14-16GVK 16GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

SK Hynix HMA82GU6MFR8N-TF 16GB

SK Hynix HMA82GU6MFR8N-TF 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Samsung V-GeN D4S8GL26A8TL5 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston 9965596-035.B00G 4GB

Kingston 9965596-035.B00G 4GB

Kingston ACR16D3LS1NGG/4G 4GB

Kingston ACR16D3LS1NGG/4G 4GB

AMD R538G1601S2LS 8GB

AMD R538G1601S2LS 8GB

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

SK Hynix HMAA4GS6AJR8N-XN 32GB

SK Hynix HMAA4GS6AJR8N-XN 32GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Corsair CMR64GX4M4C3000C15 16GB

Corsair CMR64GX4M4C3000C15 16GB

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

Patriot Memory (PDP Systems) PSD44G240041 4GB

Patriot Memory (PDP Systems) PSD44G240041 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB