RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 99U5624-001.A00G 8GB
比较
Samsung M3 78T3354BZ0-CCC 256MB vs Kingston 99U5624-001.A00G 8GB
总分
Samsung M3 78T3354BZ0-CCC 256MB
总分
Kingston 99U5624-001.A00G 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
更快的读取速度,GB/s
2
15.8
测试中的平均数值
需要考虑的原因
Kingston 99U5624-001.A00G 8GB
报告一个错误
低于PassMark测试中的延时,ns
34
46
左右 -35% 更低的延时
更快的写入速度,GB/s
11.6
1,519.2
测试中的平均数值
更高的内存带宽,mbps
19200
3200
左右 6 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 99U5624-001.A00G 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
34
读取速度,GB/s
2,909.8
15.8
写入速度,GB/s
1,519.2
11.6
内存带宽,mbps
3200
19200
Other
描述
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
3-3-3-12 / 400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
241
2929
Samsung M3 78T3354BZ0-CCC 256MB RAM的比较
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Kingston 99U5624-001.A00G 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 8ATF1G64AZ-2G1A1 8GB
Kingston 9905403-444.A00LF 4GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Kingston 9905630-039.A00G 16GB
Samsung M471A1K43CB1-CTD 8GB
Transcend Information JM3200HLB-16GK 8GB
Crucial Technology CT25664AA800.M16FG 2GB
Hyundai Inc AR36C18S8K2HU416R 8GB
Samsung M391B5273DH0-YK0 4GB
G Skill Intl F3-12800CL7-4GBRH 4GB
Kingston 9905584-016.A00LF 4GB
Kingston 9965639-002.A01G 8GB
A-DATA Technology DQVE1908 512MB
Micron Technology 8G2666CL19 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology AX4S2800316G18-B 16GB
Nanya Technology NT4GC64B8HG0NS-DI 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C
Samsung M471A2K43BB1-CPB 16GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
Corsair CMZ16GX3M2A1866C9 8GB
Kingston 9905663-006.A00G 16GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3000C15-4GVSB 4GB
报告一个错误
×
Bug description
Source link