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Samsung M3 78T3354BZ0-CCC 256MB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Samsung M3 78T3354BZ0-CCC 256MB vs Patriot Memory (PDP Systems) 4000 C16 Series 8GB

总分
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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
Patriot Memory (PDP Systems) 4000 C16 Series 8GB 需要考虑的原因
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 46
    左右 -142% 更低的延时
  • 更快的读取速度，GB/s
    21.9 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    22.2 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 3200
    左右 6.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 19
  • 读取速度，GB/s
    2,909.8 left arrow 21.9
  • 写入速度，GB/s
    1,519.2 left arrow 22.2
  • 内存带宽，mbps
    3200 left arrow 21300
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    241 left arrow 4574

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SpecTek Incorporated ?????????????????? 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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