Samsung M3 78T3354BZ0-CCC 256MB vs SK Hynix HMA42GR7AFR4N-UH 16GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

SK Hynix HMA42GR7AFR4N-UH 16GB

SK Hynix HMA42GR7AFR4N-UH 16GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

低于PassMark测试中的延时，ns

46 63

左右 27% 更低的延时
更快的读取速度，GB/s

2 10

测试中的平均数值

SK Hynix HMA42GR7AFR4N-UH 16GB

需要考虑的原因
SK Hynix HMA42GR7AFR4N-UH 16GB

报告一个错误

更快的写入速度，GB/s

7.0 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

SK Hynix HMA42GR7AFR4N-UH 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 63
读取速度，GB/s

2,909.8 10.0
写入速度，GB/s

1,519.2 7.0
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 2162

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Kingston 9905471-011.A00LF 4GB

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Hexon Technology Pte Ltd HEXON 1GB

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Apacer Technology D22.2221ZA.001 8GB

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Micron Technology 8ATF1G64AZ-2G1A1 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Panram International Corporation W4U2133PS-8G 8GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Corsair CMW64GX4M2D3600C18 32GB

Micron Technology 16JTF1G64AZ-1G6E1 8GB

Micron Technology 16JTF1G64AZ-1G6E1 8GB

Crucial Technology BLM8G44C19U4B.M8FE1 8GB

Crucial Technology BLM8G44C19U4B.M8FE1 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMSX16GX4M1A2666C18 16GB

Corsair CMSX16GX4M1A2666C18 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Corsair CMK32GX4M4K4133C19 8GB

Corsair CMK32GX4M4K4133C19 8GB