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Samsung M3 78T3354BZ0-CCC 256MB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

Samsung M3 78T3354BZ0-CCC 256MB vs Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

总分
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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 17.1
    测试中的平均数值
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB 需要考虑的原因
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 46
    左右 -28% 更低的延时
  • 更快的写入速度，GB/s
    11.0 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 3200
    左右 6.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 36
  • 读取速度，GB/s
    2,909.8 left arrow 17.1
  • 写入速度，GB/s
    1,519.2 left arrow 11.0
  • 内存带宽，mbps
    3200 left arrow 21300
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    241 left arrow 3009

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Wilk Elektronik S.A. IRX3200D464L16/16G 16GB RAM的比较

Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Crucial Technology BL16G36C16U4B.M8FB1 16GB
Crucial Technology BL16G36C16U4B.M8FB1 16GB
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SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
Crucial Technology CT8G4SFS8213.C8FAD1 8GB
Crucial Technology CT8G4SFS8213.C8FAD1 8GB
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SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
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Essencore Limited IM48GU48N28-GGGHM 8GB
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Corsair CMK32GX4M4Z2933C16 8GB
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Micron Technology 16JTF1G64AZ-1G6E1 8GB
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G Skill Intl F4-3600C18-32GTZN 32GB
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Ramaxel Technology RMT1970ED48E8F1066 2GB
Ramaxel Technology RMT1970ED48E8F1066 2GB
Corsair CMK16GX4M2B3600C18 8GB
Corsair CMK16GX4M2B3600C18 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston 9905713-001.A00G 4GB
Kingston 9905713-001.A00G 4GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CMK8GX4M1A2400C14 8GB
Corsair CMK8GX4M1A2400C14 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-2933C16-16GFX 16GB
G Skill Intl F4-2933C16-16GFX 16GB
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