Samsung M3 78T5663EH3-CF7 2GB vs Kingston KV0M5R-HYD 8GB

总分

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

总分

Kingston KV0M5R-HYD 8GB

Kingston KV0M5R-HYD 8GB

差异规格评论

差异

Samsung M3 78T5663EH3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 13.3

测试中的平均数值

Kingston KV0M5R-HYD 8GB

需要考虑的原因
Kingston KV0M5R-HYD 8GB

报告一个错误

低于PassMark测试中的延时，ns

48 65

左右 -35% 更低的延时
更快的写入速度，GB/s

8.5 2,451.8

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663EH3-CF7 2GB

Kingston KV0M5R-HYD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 48
读取速度，GB/s

4,605.9 13.3
写入速度，GB/s

2,451.8 8.5
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

878 2398

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Kingston KV0M5R-HYD 8GB

Kingston KV0M5R-HYD 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

G Skill Intl F4-3000C15-8GRR 8GB

G Skill Intl F4-3000C15-8GRR 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Crucial Technology BL8G32C16S4B.M8FE 8GB

Crucial Technology BL8G32C16S4B.M8FE 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9965669-027.A00G 16GB

Kingston 9965669-027.A00G 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Crucial Technology CT8G4SFD824A.M16FE1 8GB

Crucial Technology CT8G4SFD824A.M16FE1 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Gloway International (HK) STK2400CL17SNB16GB 16GB

Gloway International (HK) STK2400CL17SNB16GB 16GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Samsung M393A2G40DBD-CP1???? 16GB

Samsung M393A2G40DBD-CP1???? 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Apacer Technology 78.CAGMT.40C0B 8GB

Apacer Technology 78.CAGMT.40C0B 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

G Skill Intl F4-2666C15-16GVR 16GB

G Skill Intl F4-2666C15-16GVR 16GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

G Skill Intl F4-3000C16-16GSXKB 16GB

G Skill Intl F4-3000C16-16GSXKB 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-2400C17-4GFX 4GB

G Skill Intl F4-2400C17-4GFX 4GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Kingston XN205T-HYD2 16GB

Kingston XN205T-HYD2 16GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Crucial Technology CT16G4SFD8266.C16FD1 16GB

Crucial Technology CT16G4SFD8266.C16FD1 16GB