Samsung M3 78T5663EH3-CF7 2GB vs Micron Technology 36ASF2G72PZ-2G1A2 16GB

总分

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

总分

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

差异规格评论

差异

Samsung M3 78T5663EH3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 10.2

测试中的平均数值

Micron Technology 36ASF2G72PZ-2G1A2 16GB

需要考虑的原因
Micron Technology 36ASF2G72PZ-2G1A2 16GB

报告一个错误

低于PassMark测试中的延时，ns

52 65

左右 -25% 更低的延时
更快的写入速度，GB/s

8.2 2,451.8

测试中的平均数值
更高的内存带宽，mbps

17500 6400

左右 2.73 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663EH3-CF7 2GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 52
读取速度，GB/s

4,605.9 10.2
写入速度，GB/s

2,451.8 8.2
内存带宽，mbps

6400 17500

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17500, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz no data
排名PassMark (越多越好)

878 2319

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT2K102464BD160B 8GB

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Teikon TMA851S6AFR6N-UHHC 4GB