RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M3 78T5663EH3-CF7 2GB
Micron Technology 9ASF51272PZ-2G3B1 4GB

Samsung M3 78T5663EH3-CF7 2GB vs Micron Technology 9ASF51272PZ-2G3B1 4GB

总分
star star star star star
Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

总分
star star star star star
Micron Technology 9ASF51272PZ-2G3B1 4GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

差异 规格 评论

差异

Samsung M3 78T5663EH3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 10.1
    测试中的平均数值
Micron Technology 9ASF51272PZ-2G3B1 4GB 需要考虑的原因
Micron Technology 9ASF51272PZ-2G3B1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    53 left arrow 65
    左右 -23% 更低的延时
  • 更快的写入速度，GB/s
    8.0 left arrow 2,451.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663EH3-CF7 2GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 53
  • 读取速度，GB/s
    4,605.9 left arrow 10.1
  • 写入速度，GB/s
    2,451.8 left arrow 8.0
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    878 left arrow 2319

Samsung M3 78T5663EH3-CF7 2GB RAM的比较

Samsung M3 78T5663FB3-CF7 2GB
Samsung M378T5663DZ3-CF7 2GB

Micron Technology 9ASF51272PZ-2G3B1 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT16G4DFD824A.C16FE 16GB
Crucial Technology CT16G4DFD824A.C16FE 16GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Wilk Elektronik S.A. IRX3000D464L16S/8G 8GB
Wilk Elektronik S.A. IRX3000D464L16S/8G 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
内存RAM
Samsung M3 78T5663EH3-CF7 2GB
Samsung M3 78T5663EH3-CF7 2GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Super Talent F26UB16GH 16GB
Super Talent F26UB16GH 16GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
内存RAM
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Crucial Technology BLT4G3D1337DT1TX0. 4GB
G Skill Intl F4-3600C16-16GTRSC 16GB
G Skill Intl F4-3600C16-16GTRSC 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Corsair CMR64GX4M8X3800C19 8GB
Corsair CMR64GX4M8X3800C19 8GB
内存RAM
Kingston KM0VW4-MID 8GB
Kingston KM0VW4-MID 8GB
Patriot Memory (PDP Systems) PSD48G240081 8GB
Patriot Memory (PDP Systems) PSD48G240081 8GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Kingston 9905734-082.A00G 16GB
Kingston 9905734-082.A00G 16GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
UMAX Technology D4-3200-16G-1024X8-L 16GB
UMAX Technology D4-3200-16G-1024X8-L 16GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
SK Hynix HMA81GU6DJR8N-WM 8GB
SK Hynix HMA81GU6DJR8N-WM 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4DFS832A.C8FJ 8GB
Crucial Technology CT8G4DFS832A.C8FJ 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Corsair CM4B8G2J2400A14K 8GB
Corsair CM4B8G2J2400A14K 8GB
内存RAM