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Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB

Samsung M3 78T5663RZ3-CE6 2GB vs Crucial Technology BL8G30C15U4W.M8FE1 8GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
Crucial Technology BL8G30C15U4W.M8FE1 8GB

Crucial Technology BL8G30C15U4W.M8FE1 8GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 20
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,168.2 left arrow 15.1
    测试中的平均数值
Crucial Technology BL8G30C15U4W.M8FE1 8GB 需要考虑的原因
Crucial Technology BL8G30C15U4W.M8FE1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 60
    左右 -107% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 29
  • 读取速度，GB/s
    4,595.2 left arrow 20.0
  • 写入速度，GB/s
    2,168.2 left arrow 15.1
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    941 left arrow 3559

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Crucial Technology BL8G30C15U4W.M8FE1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston KHX3200C18D4/4G 4GB
Kingston KHX3200C18D4/4G 4GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
G Skill Intl F4-4000C18-8GTZKW 8GB
G Skill Intl F4-4000C18-8GTZKW 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Samsung M378A1K43BB1-CPB 8GB
Samsung M378A1K43BB1-CPB 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Corsair CMW32GX4M2Z3600C14 16GB
Corsair CMW32GX4M2Z3600C14 16GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
Crucial Technology CT16G4DFRA32A.C16FP 16GB
Crucial Technology CT16G4DFRA32A.C16FP 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
AMD R744G2400U1S-UO 4GB
AMD R744G2400U1S-UO 4GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Samsung M393A1G43EB1-CRC 8GB
Samsung M393A1G43EB1-CRC 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CM4B16G4J2400A16K2-O 16GB
Corsair CM4B16G4J2400A16K2-O 16GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Corsair CMT16GX4M2C3200C16 8GB
Corsair CMT16GX4M2C3200C16 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMR16GX4M2D3000C16 8GB
Corsair CMR16GX4M2D3000C16 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMK8GX4M2B3733C17 4GB
Corsair CMK8GX4M2B3733C17 4GB
内存RAM