Samsung M3 78T5663RZ3-CE6 2GB vs Crucial Technology BLS8G4D30BESBK.8FD 8GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Crucial Technology BLS8G4D30BESBK.8FD 8GB

Crucial Technology BLS8G4D30BESBK.8FD 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 17.9

测试中的平均数值
更快的写入速度，GB/s

2,168.2 13.4

测试中的平均数值

Crucial Technology BLS8G4D30BESBK.8FD 8GB

需要考虑的原因
Crucial Technology BLS8G4D30BESBK.8FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 60

左右 -107% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Crucial Technology BLS8G4D30BESBK.8FD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 29
读取速度，GB/s

4,595.2 17.9
写入速度，GB/s

2,168.2 13.4
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

941 3311

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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