Samsung M3 78T5663RZ3-CE6 2GB vs G Skill Intl F4-4400C19-16GVK 16GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

G Skill Intl F4-4400C19-16GVK 16GB

G Skill Intl F4-4400C19-16GVK 16GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 20.5

测试中的平均数值
更快的写入速度，GB/s

2,168.2 15.5

测试中的平均数值

G Skill Intl F4-4400C19-16GVK 16GB

需要考虑的原因
G Skill Intl F4-4400C19-16GVK 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 60

左右 -88% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

G Skill Intl F4-4400C19-16GVK 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 32
读取速度，GB/s

4,595.2 20.5
写入速度，GB/s

2,168.2 15.5
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

941 3672

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Patriot Memory (PDP Systems) PSD416G32002 16GB

Patriot Memory (PDP Systems) PSD416G32002 16GB

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Kingston ACR256X64D3S1333C9 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB