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Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology V-GeN D4V16GL24A8R 16GB

Samsung M3 78T5663RZ3-CE6 2GB vs Micron Technology V-GeN D4V16GL24A8R 16GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
Micron Technology V-GeN D4V16GL24A8R 16GB

Micron Technology V-GeN D4V16GL24A8R 16GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    60 left arrow 68
    左右 12% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 16.9
    测试中的平均数值
Micron Technology V-GeN D4V16GL24A8R 16GB 需要考虑的原因
Micron Technology V-GeN D4V16GL24A8R 16GB
报告一个错误
  • 更快的写入速度，GB/s
    8.9 left arrow 2,168.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology V-GeN D4V16GL24A8R 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 68
  • 读取速度，GB/s
    4,595.2 left arrow 16.9
  • 写入速度，GB/s
    2,168.2 left arrow 8.9
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    941 left arrow 2007

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Micron Technology V-GeN D4V16GL24A8R 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Micron Technology V-GeN D4V16GL24A8R 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMT16GX4M2C3200C14 8GB
Corsair CMT16GX4M2C3200C14 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL32G32C16U4WL.M16FB 32GB
Crucial Technology BL32G32C16U4WL.M16FB 32GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology CT8G4DFS8213.M8FA 8GB
Crucial Technology CT8G4DFS8213.M8FA 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
SK Hynix HMA82GS6MFR8N-TF 16GB
SK Hynix HMA82GS6MFR8N-TF 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Corsair CM4X8GF2400C14K4 8GB
Corsair CM4X8GF2400C14K4 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Kingmax Semiconductor FSGG45F-D8KMB 8GB
Kingmax Semiconductor FSGG45F-D8KMB 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Corsair CM4B8G1J2400A16K2-O 8GB
Corsair CM4B8G1J2400A16K2-O 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMK16GX4M2K4000C19 8GB
Corsair CMK16GX4M2K4000C19 8GB
内存RAM
Crucial Technology CT16G4SFD832A.C16FJ 16GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
Samsung M378A1K43BB1-CTD 16GB
Samsung M378A1K43BB1-CTD 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A2K43EB1-CWE 16GB
内存RAM