Samsung M3 91T2953GZ3-CF7 1GB vs G Skill Intl F4-4000C15-8GTZR 8GB

总分

Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 91T2953GZ3-CF7 1GB

总分

G Skill Intl F4-4000C15-8GTZR 8GB

G Skill Intl F4-4000C15-8GTZR 8GB

差异规格评论

差异

Samsung M3 91T2953GZ3-CF7 1GB

需要考虑的原因
Samsung M3 91T2953GZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 20

测试中的平均数值

G Skill Intl F4-4000C15-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-4000C15-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 52

左右 -108% 更低的延时
更快的写入速度，GB/s

19.2 1,906.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 91T2953GZ3-CF7 1GB

G Skill Intl F4-4000C15-8GTZR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 25
读取速度，GB/s

4,672.4 20.0
写入速度，GB/s

1,906.4 19.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

698 4243

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB

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Crucial Technology BLT4G3D1337DT1TX0. 4GB

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G Skill Intl F4-3600C16-16GTRSC 16GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLS16G4D240FSB.16FBD 16GB

Crucial Technology BLS16G4D240FSB.16FBD 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Essencore Limited IM48GU48N28-GGGHM 8GB

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Ramaxel Technology RMSA3270MB86H9F2400 4GB

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Samsung M378B5773CH0-CH9 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Crucial Technology CT8G4SFS8213.C8FAD1 8GB

Crucial Technology CT8G4SFS8213.C8FAD1 8GB