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Samsung M3 93T5750CZA-CE6 2GB
Apacer Technology 78.BAGMD.AF20B 4GB

Samsung M3 93T5750CZA-CE6 2GB vs Apacer Technology 78.BAGMD.AF20B 4GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Apacer Technology 78.BAGMD.AF20B 4GB

Apacer Technology 78.BAGMD.AF20B 4GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 13.6
    测试中的平均数值
Apacer Technology 78.BAGMD.AF20B 4GB 需要考虑的原因
Apacer Technology 78.BAGMD.AF20B 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 77
    左右 -267% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Apacer Technology 78.BAGMD.AF20B 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 21
  • 读取速度，GB/s
    3,405.2 left arrow 18.5
  • 写入速度，GB/s
    2,622.0 left arrow 13.6
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    763 left arrow 2874

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Apacer Technology 78.BAGMD.AF20B 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Apacer Technology 78.BAGMD.AF20B 4GB
Apacer Technology 78.BAGMD.AF20B 4GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Mushkin 99[2/7/4]191F 4GB
Mushkin 99[2/7/4]191F 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Essencore Limited KD4AGS88C-32N220D 16GB
Essencore Limited KD4AGS88C-32N220D 16GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Corsair CMK16GX4M4B3600C18 4GB
Corsair CMK16GX4M4B3600C18 4GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology CT8G4DFRA266.C8FP 8GB
Crucial Technology CT8G4DFRA266.C8FP 8GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Kingston 9905744-035.A00G 16GB
Kingston 9905744-035.A00G 16GB
内存RAM
Super Talent STT-WB160CL0901 2GB
Super Talent STT-WB160CL0901 2GB
G Skill Intl F4-3000C14-16GVK 16GB
G Skill Intl F4-3000C14-16GVK 16GB
内存RAM
Team Group Inc. ZEUS-2133 8GB
Team Group Inc. ZEUS-2133 8GB
Corsair CMD16GX4M4B2400C10 4GB
Corsair CMD16GX4M4B2400C10 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMT16GX4M2C3600C18 8GB
Corsair CMT16GX4M2C3600C18 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Essencore Limited KD4AGU880-36A180X 16GB
Essencore Limited KD4AGU880-36A180X 16GB
内存RAM