Samsung M3 93T5750CZA-CE6 2GB vs Corsair CMD64GX4M8X4000C19 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Corsair CMD64GX4M8X4000C19 8GB

Corsair CMD64GX4M8X4000C19 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 12.2

测试中的平均数值
更快的写入速度，GB/s

2,622.0 15.9

测试中的平均数值

Corsair CMD64GX4M8X4000C19 8GB

需要考虑的原因
Corsair CMD64GX4M8X4000C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 77

左右 -185% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMD64GX4M8X4000C19 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 27
读取速度，GB/s

3,405.2 12.2
写入速度，GB/s

2,622.0 15.9
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 3199

RAM Latency Calculator

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Kingston 99U5584-017.A00LF 4GB

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Crucial Technology CT8G4SFD824A.M16FB 8GB

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Kingston KHX1600C9S3L/4G 4GB

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Apacer Technology 76.C102G.D170B 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology BL8G32C16U4B.8FE 8GB

Crucial Technology BL8G32C16U4B.8FE 8GB

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Corsair CMK64GX4M2E3200C16 32GB

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Elpida EBJ40UG8EFU0-GN-F 4GB

Kingston KHX3200C20S4/16GX 16GB

Kingston KHX3200C20S4/16GX 16GB