RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFD8213.M16FB 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology CT8G4SFD8213.M16FB 8GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Crucial Technology CT8G4SFD8213.M16FB 8GB

Crucial Technology CT8G4SFD8213.M16FB 8GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 12.1
    测试中的平均数值
Crucial Technology CT8G4SFD8213.M16FB 8GB 需要考虑的原因
Crucial Technology CT8G4SFD8213.M16FB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 77
    左右 -185% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFD8213.M16FB 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 27
  • 读取速度，GB/s
    3,405.2 left arrow 15.5
  • 写入速度，GB/s
    2,622.0 left arrow 12.1
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    763 left arrow 2628

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Crucial Technology CT8G4SFD8213.M16FB 8GB RAM的比较

Nanya Technology M2F8G64CB8HC9N-DI 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFD8213.M16FB 8GB
Crucial Technology CT8G4SFD8213.M16FB 8GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Corsair CM4B8G7L2666A16K2-O 8GB
Corsair CM4B8G7L2666A16K2-O 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMW16GX4M2Z2933C16 8GB
Corsair CMW16GX4M2Z2933C16 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingston KDK8NX-MIE 16GB
Kingston KDK8NX-MIE 16GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Crucial Technology CB8GS2400.C8ET 8GB
Crucial Technology CB8GS2400.C8ET 8GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Avexir Technologies Corporation T 4GB
Avexir Technologies Corporation T 4GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Kingston X6TCK6-MIE 32GB
Kingston X6TCK6-MIE 32GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Corsair CMW16GX4M2D3600C18 8GB
Corsair CMW16GX4M2D3600C18 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
内存RAM
Kingston KHX16 4GB
Kingston KHX16 4GB
Crucial Technology BL8G32C16S4B.M8FE 8GB
Crucial Technology BL8G32C16S4B.M8FE 8GB
内存RAM