Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-3200C16-8GVKB 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

G Skill Intl F4-3200C16-8GVKB 8GB

G Skill Intl F4-3200C16-8GVKB 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 18.5

测试中的平均数值
更快的写入速度，GB/s

2,622.0 14.4

测试中的平均数值

G Skill Intl F4-3200C16-8GVKB 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GVKB 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 77

左右 -166% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3200C16-8GVKB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 29
读取速度，GB/s

3,405.2 18.5
写入速度，GB/s

2,622.0 14.4
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 3457

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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SK Hynix HYMP125U64CP8-S6 2GB

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Good Wealth Technology Ltd. 8GB

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Corsair CMT32GX4M2C3200C16 16GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

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Samsung M378A5143DB0-CPB 4GB

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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Samsung M393B1K70CH0-CH9 8GB

Corsair CMR64GX4M4C3333C16 16GB

Corsair CMR64GX4M4C3333C16 16GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Corsair CMV4GX4M1A2400C16 4GB

Corsair CMV4GX4M1A2400C16 4GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

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G Skill Intl F4-3600C14-8GTRSB 8GB

G Skill Intl F4-3600C14-8GTRSB 8GB