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Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905624-013.A00G 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Kingston 9905624-013.A00G 8GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Kingston 9905624-013.A00G 8GB

Kingston 9905624-013.A00G 8GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 14.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 10.2
    测试中的平均数值
Kingston 9905624-013.A00G 8GB 需要考虑的原因
Kingston 9905624-013.A00G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 77
    左右 -185% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905624-013.A00G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 27
  • 读取速度，GB/s
    3,405.2 left arrow 14.5
  • 写入速度，GB/s
    2,622.0 left arrow 10.2
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    763 left arrow 2393

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Kingston 9905624-013.A00G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1K43BB1-CTD 16GB
Samsung M378A1K43BB1-CTD 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMN16GX4M2Z3200C16 8GB
Corsair CMN16GX4M2Z3200C16 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905624-013.A00G 8GB
Kingston 9905624-013.A00G 8GB
内存RAM
Kingston KTC1G-UDIMM 1GB
Kingston KTC1G-UDIMM 1GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Corsair CMH128GX4M4E3200C16 32GB
Corsair CMH128GX4M4E3200C16 32GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CMK128GX4M4A2666C16 32GB
Corsair CMK128GX4M4A2666C16 32GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Smart Modular SMS4WEC3C0K0446SCG 4GB
Smart Modular SMS4WEC3C0K0446SCG 4GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Kingston 9965690-002.A00G 8GB
Kingston 9965690-002.A00G 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
内存RAM
Team Group Inc. ZEUS-2133 8GB
Team Group Inc. ZEUS-2133 8GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT8G4DFD824A.C16FHP 8GB
Crucial Technology CT8G4DFD824A.C16FHP 8GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
内存RAM
Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
Samsung M391A2K43BB1-CPB 16GB
Samsung M391A2K43BB1-CPB 16GB
内存RAM