Samsung M3 93T5750CZA-CE6 2GB vs Kllisre 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Kllisre 8GB

Kllisre 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 11.7

测试中的平均数值

Kllisre 8GB

需要考虑的原因
Kllisre 8GB

报告一个错误

低于PassMark测试中的延时，ns

46 77

左右 -67% 更低的延时
更快的写入速度，GB/s

8.6 2,622.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Kllisre 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 46
读取速度，GB/s

3,405.2 11.7
写入速度，GB/s

2,622.0 8.6
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 2349

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Samsung M471B5773DH0-YK0 2GB

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AMD R5S38G1601U2S 8GB

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Crucial Technology CT8G4DFS832A.M8FR 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Micron Technology 4ATF51264HZ-2G3E1 4GB

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Kingston ACR26D4S9S8ME-8 8GB

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Crucial Technology BL16G32C16U4B.M8FB1 16GB

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G Skill Intl F4-4266C19-8GTZSW 8GB

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Kingston 99U5403-036.A00G 4GB

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Apacer Technology 78.BAGN8.40C0B 4GB

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SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Wilk Elektronik S.A. IR2400D464L17S/4G 4GB

Wilk Elektronik S.A. IR2400D464L17S/4G 4GB