Samsung M3 93T5750CZA-CE6 2GB vs Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 13.5

测试中的平均数值
更快的写入速度，GB/s

2,622.0 10.6

测试中的平均数值

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

需要考虑的原因
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 77

左右 -148% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 31
读取速度，GB/s

3,405.2 13.5
写入速度，GB/s

2,622.0 10.6
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 2330

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology DQVE1908 512MB

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Apacer Technology 76.B305G.D500B 4GB

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Peak Electronics 256X64M-67E 2GB

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Essencore Limited IM44GU48N21-FFFHM 4GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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G Skill Intl F4-2666C19-8GVK 8GB

G Skill Intl F4-2666C19-8GVK 8GB

Nanya Technology NT1GT64U8HB0BN-3C 1GB

Nanya Technology NT1GT64U8HB0BN-3C 1GB

Patriot Memory (PDP Systems) PSD22G8002S 2GB

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SK Hynix HMT31GR7BFR4C-H9 8GB

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Crucial Technology BLS8G4D26BFSCK.8FBD 8GB

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Kingston 99U5474-028.A00LF 4GB

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Kingston KF3000C16D4/32GX 32GB

Kingston KF3000C16D4/32GX 32GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Teikon TMA851S6AFR6N-UHHC 4GB

Teikon TMA851S6AFR6N-UHHC 4GB

Kingston 9905471-001.A01LF 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

Team Group Inc. DDR4 2800 8GB

Team Group Inc. DDR4 2800 8GB

Kingston 99U5403-492.A00LF 8GB

Kingston 99U5403-492.A00LF 8GB

Corsair CMR16GX4M2C3200C16 8GB

Corsair CMR16GX4M2C3200C16 8GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Corsair CMK32GX4M4K4266C19 8GB

Corsair CMK32GX4M4K4266C19 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Neo Forza NMUD480E82-3600 8GB

Neo Forza NMUD480E82-3600 8GB