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Samsung M3 93T5750CZA-CE6 2GB
V-GEN D4S4GL32A16TS 4GB

Samsung M3 93T5750CZA-CE6 2GB vs V-GEN D4S4GL32A16TS 4GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
V-GEN D4S4GL32A16TS 4GB

V-GEN D4S4GL32A16TS 4GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.9
    测试中的平均数值
V-GEN D4S4GL32A16TS 4GB 需要考虑的原因
V-GEN D4S4GL32A16TS 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    62 left arrow 77
    左右 -24% 更低的延时
  • 更快的写入速度，GB/s
    7.4 left arrow 2,622.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
V-GEN D4S4GL32A16TS 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 62
  • 读取速度，GB/s
    3,405.2 left arrow 15.9
  • 写入速度，GB/s
    2,622.0 left arrow 7.4
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    763 left arrow 1891

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

V-GEN D4S4GL32A16TS 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
V-GEN D4S4GL32A16TS 4GB
V-GEN D4S4GL32A16TS 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Kingston 9905702-006.A00G 8GB
Kingston 9905702-006.A00G 8GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
INTENSO 5641160 8GB
INTENSO 5641160 8GB
内存RAM
Corsair CMZ16GX3M2A1600C9 8GB
Corsair CMZ16GX3M2A1600C9 8GB
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology BLE8G4D30AEEA.K16FE 8GB
Crucial Technology BLE8G4D30AEEA.K16FE 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 9905678-105.A00G 8GB
Kingston 9905678-105.A00G 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston 9965589-017.D00G 8GB
Kingston 9965589-017.D00G 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Apacer Technology 78.CAGP7.C7C0B 8GB
Apacer Technology 78.CAGP7.C7C0B 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMT32GX4M4C3200C14 8GB
Corsair CMT32GX4M4C3200C14 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6-Y5 1GB
Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6
V-GEN D4H8GS24A8 8GB
V-GEN D4H8GS24A8 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Kingston 9965589-005.A01G 8GB
Kingston 9965589-005.A01G 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston 9905625-139.A00G 16GB
Kingston 9905625-139.A00G 16GB
内存RAM