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Samsung M378A1G43DB0-CPB 8GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB

Samsung M378A1G43DB0-CPB 8GB vs A-DATA Technology AO1P24HC4N2-BYNS 4GB

总分
star star star star star
Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分
star star star star star
A-DATA Technology AO1P24HC4N2-BYNS 4GB

A-DATA Technology AO1P24HC4N2-BYNS 4GB

差异 规格 评论

差异

Samsung M378A1G43DB0-CPB 8GB 需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 48
    左右 25% 更低的延时
  • 更快的读取速度，GB/s
    15 left arrow 14.4
    测试中的平均数值
A-DATA Technology AO1P24HC4N2-BYNS 4GB 需要考虑的原因
A-DATA Technology AO1P24HC4N2-BYNS 4GB
报告一个错误
  • 更快的写入速度，GB/s
    12.1 left arrow 10.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13 更高的带宽

规格

完整的技术规格清单
Samsung M378A1G43DB0-CPB 8GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 48
  • 读取速度，GB/s
    15.0 left arrow 14.4
  • 写入速度，GB/s
    10.3 left arrow 12.1
  • 内存带宽，mbps
    17000 left arrow 19200
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2569 left arrow 2080

Samsung M378A1G43DB0-CPB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

A-DATA Technology AO1P24HC4N2-BYNS 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung 1600 CL10 Series 8GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Samsung M3 93T5750CZA-CE6 2GB
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内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-4800C19-8GTZRC 8GB
G Skill Intl F4-4800C19-8GTZRC 8GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
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内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
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Kingston 8ATF1G64HZ-2G3B2 8GB
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内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMW16GX4M2C3600C18 8GB
Corsair CMW16GX4M2C3600C18 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMW16GX4M2Z2933C16 8GB
Corsair CMW16GX4M2Z2933C16 8GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
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Kingston 9905711-002.A00G 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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InnoDisk Corporation M4S0-AGS1O5IK 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-3200C16-16GRS 16GB
G Skill Intl F4-3200C16-16GRS 16GB
内存RAM