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Samsung M378A1K43EB2-CWE 8GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

Samsung M378A1K43EB2-CWE 8GB vs Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.6 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 9.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB 需要考虑的原因
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 33
    左右 -22% 更低的延时

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 27
  • 读取速度，GB/s
    17.6 left arrow 14.4
  • 写入速度，GB/s
    12.0 left arrow 9.2
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 2575

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB RAM的比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston 9965516-049.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
内存RAM
SK Hynix HMAA4GS6AJR8N-XN 32GB
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SK Hynix HMAA4GS6CJR8N-XN 32GB
SK Hynix HMAA4GS6CJR8N-XN 32GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-2800C16-8GRK 8GB
G Skill Intl F4-2800C16-8GRK 8GB
内存RAM
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Patriot Memory (PDP Systems) 2133 C14 Series 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
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Essencore Limited KD48GU481-26N1600 8GB
内存RAM
A-DATA Technology AD5U48008G-B 8GB
A-DATA Technology AD5U48008G-B 8GB
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Apacer Technology D12.2755BS.001 16GB
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
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Crucial Technology BL16G26C16S4B.16FD 16GB
内存RAM
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Kingston KHX2133C11D3/4GX 4GB
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G Skill Intl F4-3200C16-8GRS 8GB
内存RAM
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A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3600C19-16GSXKB 16GB
G Skill Intl F4-3600C19-16GSXKB 16GB
内存RAM
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Kingston 99U5595-005.A00LF 2GB
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内存RAM
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Samsung M378A2G43MX3-CTD 16GB
内存RAM
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Samsung M378T5663QZ3-CF7 2GB
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A-DATA Technology 11137401 8GB
内存RAM
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Micron Technology 4ATF51264HZ-2G3B1 4GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
内存RAM